Fast and scalable memory characteristics of Gedoped SbTe phase change materials
نویسندگان
چکیده
Phase change memory (PCM) has opportunities of various applications on the premise of its high performance operations, which are still to develop with innovations such as change of a memorymaterial. In respects of high-speed and high-scalability memory characteristics, d-phase Ge-doped SbTe (GeST) materials stand as highly promising candidates. An overview of the material and device characteristics of these materials is presented primarily based on our recent experimental and computational studies and with a particular regard to their Sb-to-Te ratio (STR) dependence.
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